SIGC15T60UN edited by infineon technologies ai ps dd hv3, l 7402u , edition 2 , 28.11 .2003 high speed igbt chip in npt - technology this chip is used for: sgb15n60hs features: low eoff 600v npt technology 100m chip short circuit prove positive temperature coefficient easy paralleling applications: welding pfc u ps g c e chip type v ce i cn die size package ordering code SIGC15T60UN 600v 15a 3.2 x 4.55 mm 2 sawn on foil q67050 - a4221 - a101 mechanical parameter: raster size 3.2 x 4.55 area total / active 14.6 / 10.7 emitter pad size 2.2 x 1.7 gate pad size 1.1 x 0.696 mm 2 thickness 100 m wafer size 150 mm flat position 270 deg max.possible chips per wafer 1022 passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? syste m suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at a n ambient temperature of 23c
SIGC15T60UN edited by infineon technologies ai ps dd hv3, l 7402u , edition 2 , 28.11 .2003 maximum ratings: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 45 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value para meter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v, i c =500a 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =15a 2.8 3.15 gate - emitter threshold voltage v ge(th) i c =400a, v ge =v c e 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v 40 a gate - emitter leakage current i ges v ce =0v, v ge =20v 100 na dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capac itance c iss - 810 output capacitance c oss - 83 reverse transfer capacitance c rss v ce =25v v ge =0v f =1mhz - 51 pf switching characteristics (tested at component) , inductive load: 1) values also influenced by parasitic l - and c - in measurement and package. value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - 11 rise time t r - 6 turn - off delay time t d(off) - 72 fall time t f t j =150 c v cc =400v i c =15a v ge =+15/0v r g =3.6 w - 26 ns
SIGC15T60UN edited by infineon technologies ai ps dd hv3, l 7402u , edition 2 , 28.11 .2003 chip drawing:
SIGC15T60UN edited by infineon technologies ai ps dd hv3, l 7402u , edition 2 , 28.11 .2003 further electrical characteristics: this chip data sheet refers to the device data sheet sg b15n60hs package :to220 description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to desc ribe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding c ircuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technolog ies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - suppor t device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail , it is reasonable to assume that the health of the user or other persons may be endangered.
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